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11
Understanding Switching Mechanism of Selector-Only Memory Using Se-Based Ovonic Threshold Switch Device
Jangseop Lee, Yoori Seo, Sanghyun Ban, Dong Gwan Kim, Yu Bin Park, Tae Hoon Lee, Hyunsang Hwang
IEEE Transactions on Electron Devices, 202405
12
Enhancement of NbO2-based oscillator neuron device performance via cryogenic operation
Ohhyuk Kwon, Seongjae Heo, Dongmin Kim, Jiho Kim, Hyunsang Hwang
Nanotechnology, 202404
13
3D Stackable Vertical-Sensing Electrochemical Random-Access Memory Using Ion-Permeable WS2 Electrode for High-Density Neuromorphic Systems
Kyumin Lee, Seungkwon Hwang, Dongmin Kim, Jongwon Yoon, Jung-Dae Kwon, Yonghun Kim, Hyunsang Hwang
Advanced Functional Materials, 202403
14
Variability and Reliability Study of Nano-Scale Hf0.5Zr0.5O2 Ferroelectric Devices Using O3 Treatment
Hojung Jang, Alireza Kashir, Seungyeol Oh, Kyumin Lee, Laeyong Jung, Mostafa Habibi, Tony Schenk, Hyunsang Hwang
IEEE Electron Device Letters, 202403
15
Enhanced ON/OFF Ratio (4 × 105) and Robust Endurance (> 1010) in an InGaZnO/HfxZr1-xO2Ferroelectric Diode via Defect Engineering
Laeyong Jung, Seungyeol Oh, Hojung Jang, Kyumin Lee, Wooseok Choi, Hyunsang Hwang
IEEE Transactions on Electron Devices, 202403
16
Bypass Resistive RAM with Interface Switching-Based Resistive RAM and InGaZnO Bypass Transistor for V-NAND Applications
Geonhui Han, Kyumin Lee, Dongmin Kim, Yoori Seo, Jinwoo Lee, Jinmyung Choi, Dongho Ahn, Sechung Oh, Hyunsang Hwang
IEEE Electron Device Letters, 202402
17
High-performance resistive random access memory using two-dimensional electron gas electrode and its switching mechanism analysis
Jiho Kim, Ohhyuk Kwon, Kyumin Lee, Geonhui Han, Hyunsang Hwang
Nanotechnology, 202401
18
Accurate Evaluation of High-k HZO/ZrO2Films by Morphotropic Phase Boundary
Seungyeol Oh, Hojung Jang, Hyunsang Hwang
IEEE Electron Device Letters, 202401
19
Subthreshold Bias-Induced Threshold Voltage Shift of the Ovonic Threshold Switch
Sanghyun Ban, Jangseop Lee, Yoori Seo, Ohhyuk Kwon, Wootae Lee, Taehoon Kim, Hyunsang Hwang
IEEE Electron Device Letters, 202401
20
Improving the selector characteristics of ovonic threshold switch via UV treatment process
Yoori Seo, Jangseop Lee, Sanghyun Ban, Dongmin Kim, Geonhui Han, Hyunsang Hwang
Applied Physics Letters, 202312
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