발행물
컨퍼런스
IEEE Nanotechnology Materials and Devices conference
2015.10
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Reliability properties in sub-50 nm high performance high-k metal gate stacks SiGe pMOSFETs
Proceedings of 2010 International Conference on Solid State Devices and Materials
2024.09
C-V Characteristics and Analysis of Undoped Gate-All-Around Nanowire FET Array
Proceedings of 2010 IEEE International Reliability Physics Symposium
2006.05
Characterization of Gate-All-Around Si-NWFET, including Rsd, Cylindrical Coordinate Based 1/f Noise and Hot Carrier Effects
IEEE International Electron Devices Meeting 2009 (IEDM 2009)
2009.12
Impact of Dipole-induced Dielectric Relaxation on High-frequency Performance in La-incorporated HfSiON/Metal Gate nMOSFET
Proceedings of 2009 International Conference on Solid State Devices and Materials (SSDM 2009)
2009.10
Series Resistance Behavior Extracted from Silicon Nanowire Reansistors Using the Y-function Technique