발행물
컨퍼런스
International Eledtron Devices Meeting 2009
,
Impact of Dipole-induced Dielectric Relaxation on High-frequency Performance in La-incorporated HfSiON/Metal Gate
International Conference on Solid State Devices and Materials
Series Resistance Behavior Extracted from Silicon Nanowire Reansistors Using the Y-function Technique
IEEE International Electron Devices Meeting
FinFET Process Refinement for Improved Mobility and Gate Work Function Engineering