발행물
컨퍼런스
NANO KOREA 2015 Symposium
2003.07
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The Electrical Variations due to Grain Boundary using Voronoi Method in Tunneling Field-Effect-Transistor (TFET) of Polysilicon Nanowire Channel
Electrical Variation of Vertical Macaroni NAND Cells due to Random Grain Boundary Using Voronoi Method
IEEE Nano
2030.07
Effects of Buffer Concentration on Sensing Performances of Ion-Sensitive Field-Effect Transistors with Si-Nanowires
IEEE Sensors
A Threshold Voltage Variation Calibration Algorithm for An ISFET-Based Low-Cost pH Sensor System
IEEE Nanoelectronics Conference
2031.07
The Variability due to Random Discrete Dopant and Grain Boundary in 3D NAND Unit Cell