Role of an encapsulating layer for improved resistance drift in phase change random access memory
B. Jin, J. Kim, D.-H. Pi, H. S. Kim, M. Meyyappan, J.-S. Lee
AIP Advances, 2014
62
Characterization and modeling of 1/f noise in Si-nanowire FETs: effects of cylindrical geometry and different processing of oxides
R.-H. Baek, C.-K. Baek, H.-S. Choi, J.-S. Lee, Y. Y. Yeoh, K. H. Yeo, D.-W. Kim, D. M. Kim, Y.-H. Jeong
IEEE Transaction on Nanotechnology, 2011
63
Analysis of Abnormal Upturns in Capacitance-Voltage Characteristics for MOS Devices with High-k Dielectrics
C.-W. Sohn, H.-C. Sagong, E.-Y. Jeong, D.-Y. Choi, M. S, Park, J.-S. Lee, C. Y. Kang, R. Jammy, Y.-H. Jeong
IEEE Electron Device Letters, 2011
64
C-V Characteristics in Undoped Gate-All-Around Nanowire FET Array
R.-H. Baek, C.-K. Baek, S.-H. Lee, S. D. Suk, M. Li, Y. Y. Yeoh, K. H. Yeo, D.-W. Kim, J.-S. Lee, D. M. Kim, Y.- H. Jeong
IEEE Electron Device Letters, 2011
65
Synthesis of ZnTe nanostructures by vapor-liquid-solid technique
K. Davami, D. G. Kang, J.-S. Lee, M. Meyyappan
Chemical Physics Letters, 2011
66
nanoscale memory devices
A. Chung, M. J. Deen, J.-S. Lee, M. Meyyappan
Nanotechnology, 2010
67
The Effect of a Si Capping Layer on RF Characteristics of High-k/Metal Gate SiGe Channel pMOSFETs
M. S. Park, K. T. Lee, C. Y. Kang, G.-B. Choi, H. C., Sagong, C. W. Sohn, B. G. Min, J. Oh, P. Majhi, H. H. Tseng, J. C. Lee, J.-S. Lee, R. Jammy, Y.-H. Jeong
IEEE Electron Device Letters, 2010
68
The Quiet Revolution of Inorganic Nanowires: Fabrication Techniques and Potential Applications
M. Meyyappan, J.-S. Lee
IEEE Nanotechnology Magazine, 2010
69
Comparison of Series Resistance and Mobility Degradation Extracted from n- and p-Type Si-Nanowire Field Effect Transistors Using the Y-Function Technique
R.-H. Baek, C.-K. Baek, S. W. Jung, Y. Y. Yeoh, D. W. Kim, J.-S. Lee, D. M. Kim, Y.-H. Jeong
Japanese Journal of Applied Physics, 2010
70
Electrical and gas sensing properties of ZnO nanorod arrays directly grown on a four-probe electrode system