Parametrization of the Gaussian Disorder Model to Account for the High Carrier Mobility in Disordered Organic Transistors
Lee, Y, Jung, S, Plews, A, Nejim, A, Simonetti, O, Giraudet, L, Baranovskii, SD, Gebhard, F, Meerholz, K, Jung, S, Horowitz, G, Bonnassieux, Y
PHYSICAL REVIEW APPLIED, 2021