IEEE Transactions on Electron Device Letters, 2010
263
Effect of illumination and annealing on electrical properties of indium tin oxide/poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate)/poly(3-hexylthiophene)/Al device
Y. I. Lee, J. H. Youn, M. S. Ryu, J. H. Kim, J. Jang, H. T Moon
Journal of Applied Physics, 2010
264
Light induced instabilities in amorphous indium-gallium-zinc-oxide thin-film transistors
Md D. H. Chowdhury, P. Miglioraton, J. Jang
Applied Physics Letters, 2010
265
Rapid-thermal annealing of amorphous silicon on oxide semiconductors
S. Saxena, J. Jang
IEICE Transactions on Electronics, 2010
266
Polycrystalline silicon thin-film transistor using Xe flash-lamp annealing
S. Saxena, D. C. Kim, J. H. Park, J. Jang
IEEE Electron Devices Letters, 2010
267
Low voltage-driven CMOS circuits based on SiOG
M. H. Choi, J. W. Choi, S. H. Park, W. J. Choi, M. Mativenga, J. Jang, R. Mruthyunjaya, T. J. Tredwell, E. Mozdy, C. K. Williams
Electrochemical and Solid-State Letters, 2010
268
A high performance inkjet printed Zinc tin oxide transparent thin-film transistor manufactured at the maximum process temperature of 300℃ and its stability test
C. Avis, J. Jang
Electrochemical and Solid-State Letters, 2010
269
Stable 6,13-bis(4-pentylphenylethynyl) pentacene thin-film transistor by ink-jet printing
S. H. Lee, S. H. Kim, D. J. Choo, J. Jang
Current Applied Physics, 2010
270
Highly efficient inverted poly(3-hexylthiophene): Methano-fullerene [6,6]-phenyl C71-butyric acid methyl ester bulk heterojunction solar cell with Cs2CO3 and MoO3
Y. I. Lee, J. H. Youn, M. S. Ryu, J. H. Kim, H. T. Moon, J. Jang