Stable Photovoltaic Cells based on Graphene Oxide/Indium Zinc Oxide Bilayer Anode Buffer

Comparison of Organic Photovoltaic with Graphene Oxide Cathode and Anode Buffer Layers

Photo-mask Effect in Bulk Heterojunction Organic Solar Cells with ZnO Cathode Buffer Layer

Positive bias stress (PBS) activation energy. Equal activation energies for stress and recovery indicate that carrier migration plays a great role under positive bias stress in a-IGZO TFTs

Mechanism of negative bias and illumination stress (NBIS). (a) Activation energy [10]. (b) Proposed configuration coordinate diagram for creation and recovery of NBIS defects. The relevant crystal states are labeled as: ‘A’, ground state; ‘B’, saddle point; ‘C’, neutral oxygen vacancy state; ‘D’, doubly ionized oxygen vacancy state; ‘E’, weak or reconstructed bond state. As explained in Ref. [11], the associated energies are as follows: E(B)-E(A)=5.25eV; E(C)-E(A)=4eV=Hf0, neutral vacancy formation energy; E(D)-E(A)= Hf++ <0, formation energy of the doubly ionized vacancy; E(B)-E(E)=1.06eV, activation energy for NBIS; E(B)-E(C)=1.25eV, activation energy for NBIS recovery [11], [12]. (c) Positive corelelation energy (+ U) behaviour in a-IGZO [11].

Quasi-2D Organic Cation-Doped Formamidinium Lead Bromide (FAPbBr3) Perovskite Light-Emitting Diodes by Long Alkyl Chain

Vertical phase separation of PSS in organic photovoltaics with a nickel oxide doped PEDOT:PSS “

A New a-Si:H Thin-Film Transister Pixel Circuit for Active-Matrix Organic Light-Emitting Diodes

High Speed and Wider Swing, Level Shifter Using Low-Temperature Poly-Silicon Oxide TFTs

High Field Effect Mobility, Amorphous In-Ga-Sn-O Thin-Film Transistor With No Effect of Negative Bias Illumination Stress