발행물
컨퍼런스
The 31st Korean Conference On Semiconductors
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Modeling the Valence Charge Mechanism and Drift Behavior of Oxygen Vacancies in HfO2-Based Interlayer Memristor: A Simulation Approach
Sound Localization Using Brain-inspired Memristive Delay System for Active Speaker Detection
A Memristor-based Elementary Motion Detector for a Maneuver Prediction
Electromigration Reliability of Barrierless Ruthenium and Molybdenum for Sub-10nm Interconnection
CMOS-compatible, 2DEG-based Three-terminal Dynamic Memristor