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전체 논문

198

141

Designed Memristor Circuit for Self-Limited Analog Switching and its Application to a Memristive Neural Network
Song, H[Song, Hanchan], Kim, YS[Kim, Young Seok], Park, J[Park, Juseong], Kim, KM[Kim, Kyung Min]
ADVANCED ELECTRONIC MATERIALS, 201906

142

Time-Efficient Stateful Dual-Bit-Memristor Logic
Xu, N[Xu, Nuo], Fang, L[Fang, Liang], Kim, KM[Kim, Kyung Min], Hwang, CS[Hwang, Cheol Seong]
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 201906

143

Single-Cell Stateful Logic Using a Dual-Bit Memristor
Kim, KM[Kim, Kyung Min], Xu, N[Xu, Nuo], Shao, X[Shao, Xinglong], Yoon, KJ[Yoon, Kyung Jean], Kim, HJ[Kim, Hae Jin], Williams, RS[Williams, R. Stan, Hwang, CS[Hwang, Cheol Seong]
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 201903

144

Fully Functional Logic-In-Memory Operations Based on a Reconfigurable Finite-State Machine Using a Single Memristor
Xu, N[Xu, Nuo], Yoon, KJ[Yoon, Kyung Jean], Kim, KM[Kim, Kyung Min], Fang, L[Fang, Liang], Hwang, CS[Hwang, Cheol Seong]
ADVANCED ELECTRONIC MATERIALS, 201811

145

Nociceptive Memristor
Kim, Y[Kim, Yumin], Kwon, YJ [Kwon, Young Jae ], Kwon, DE[Kwon, Dae Eun ], Yoon, KJ[Yoon, Kyung Jean], Yoon, JH[Yoon, Jung Ho ], Yoo, S[Yoo, Sijung], Kim, HJ[Kim, Hae Jin ], Park, TH[Park, Tae Hyung], Han, J­W[Han, Jin­Woo], Kim, KM[Kim, Kyung Min], Hwang, CS[Hwang, Cheol Seong]
ADVANCED MATERIALS, 201802

146

An artificial nociceptor based on a diffusive memristor
Yoon, JH [Yoon, Jung Ho], Wang, ZR [Wang, Zhongrui], Kim, KM [Kim, Kyung Min], Wu, HQ [Wu, Huaqiang], Ravichandran, V [Ravichandran, Xia, QF [Xia, Qiangfei], Hwang, CS [Hwang, Cheol Seong, Yang, JJ [Yang, J. Joshua]
NATURE COMMUNICATIONS, 201801

147

Four-Bits-Per-Cell Operation in an HfO2-Based Resistive Switching Device
Kim, GH [Kim, Gun Hwan], Ju, H [Ju, Hyunsu], Yang, MK [Yang, Min Kyu], Lee, DK [Lee, Dong Kyu], Choi, JW [Choi, Ji Woon], Jang, JH [Jang, Jae Hyuck], Lee, SG [Lee, Sang Gil], Cha, IS [Cha, Ik Su], Park, BK [Park, Bo Keun], Han, JH [Han, Jeong Hwan], Chung, TM [Chung, Taek-Mo], Kim, KM [Kim, Kyung Min], Hwang, CS [Hwang, Cheol Seong, Lee, YK [Lee, Young Kuk]
SMALL, 201710

148

Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar Application
Kim, KM[Kim, Kyung Min], Zhang, JM[Zhang, Jiaming], Graves, C[Graves, Catherine], Yang, JJ[Yang, J. Joshua], Choi, BJ[Choi, Byung Joon], Hwang, CS[Hwang, Cheol Seong], Li, ZY[Li, Zhiyong], Williams, RS[Williams, R. Stan
NANO LETTERS, 201611

149

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory
Shao, XL[Shao, Xing Long], Kim, KM[Kim, Kyung Min], Yoon, KJ[Yoon, Kyung Jean], Song, SJ[Song, Seul Ji], Yoon, JH[Yoon, Jung Ho], Kim, HJ[Kim, Hae Jin], Park, TH[Park, Tae Hyung], Kwon, DE[Kwon, Dae Eun], Kwon, YJ[Kwon, Young Jae], Kim, YM[Kim, Yu Min], Hu, XW[Hu, Xi Wen], Zhao, JS[Zhao, Jin Shi], Hwang, CS[Hwang, Cheol Seong]
NANOSCALE, 201609

150

Memristors for Energy-Efficient New Computing Paradigms
Jeong, DS[Jeong, Doo Seok], Kim, KM[Kim, Kyung Min], Kim, S[Kim, Sungho], Choi, BJ[Choi, Byung Joon], Hwang, CS[Hwang, Cheol Seong]
ADVANCED ELECTRONIC MATERIALS, 201609