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198

151

Voltage divider effect for the improvement of variability and endurance of TaOx memristor
Kim, KM[Kim, Kyung Min], Yang, JJ[Yang, J. Joshua], Strachan, JP[Strachan, John Pa, Grafals, EM[Grafals, Emmanuell, Ge, N[Ge, Ning], Melendez, ND[Melendez, Noraica, Li, ZY[Li, Zhiyong], Williams, RS[Williams, R. Stan
SCIENTIFIC REPORTS, 201602

152

Trilayer Tunnel Selectors for Memristor Memory Cells
Choi, BJ[Choi, Byung Joon], Zhang, JM[Zhang, Jiaming], Norris, K[Norris, Kate], Gibson, G[Gibson, Gary], Kim, KM[Kim, Kyung Min], Jackson, W[Jackson, Warren], Zhang, MXM[Zhang, Min-Xian Max, Li, ZY[Li, Zhiyong], Yang, JJ[Yang, J. Joshua], Williams, RS[Williams, R. Stan
ADVANCED MATERIALS, 201601

153

Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell
Park, TH[Park, Tae Hyung], Song, SJ[Song, Seul Ji], Kim, HJ[Kim, Hae Jin], Kim, SG[Kim, Soo Gil], Chung, S[Chung, Suock], Kim, BY[Kim, Beom Yong], Lee, KJ[Lee, Kee Jeung], Kim, KM[Kim, Kyung Min], Choi, BJ[Choi, Byung Joon], Hwang, CS[Hwang, Cheol Seong]
SCIENTIFIC REPORTS, 201511

154

Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
Seok, JY[Seok, Jun Yeong], Yoon, JH[Yoon, Jung Ho], Kim, KM[Kim, Kyung Min], Song, SJ[Song, Seul Ji], Yoon, KJ[Yoon, Kyung Jean], Kwon, DE[Kwon, Dae Eun], Park, TH[Park, Tae Hyung], Kwon, YJ[Kwon, Young Jae], Shao, X[Shao, Xinglong], Hwang, CS[Hwang, Cheol Seong]
ADVANCED MATERIALS, 201507

155

Low Variability Resistor-Memristor Circuit Masking the Actual Memristor States
Kim, KM[Kim, Kyung Min], Yang, JJ[Yang, J. Joshua], Merced, E[Merced, Emmanuelle], Graves, C[Graves, Catherine], Lam, S[Lam, Sity], Davila, N[Davila, Noraica], Hu, M[Hu, Miao], Ge, N[Ge, Ning], Li, ZY[Li, Zhiyong], Williams, RS[Williams, R. Stan, Hwang, CS[Hwang, Cheol Seong]
ADVANCED ELECTRONIC MATERIALS, 201506

156

Thickness-dependent electroforming behavior of ultra-thin Ta2O5 resistance switching layer
Park, TH[Park, Tae Hyung], Song, SJ[Song, Seul Ji], Kim, HJ[Kim, Hae Jin], Kim, SG[Kim, Soo Gil], Chung, S[Chung, Suock], Kim, BY[Kim, Beom Yong], Lee, KJ[Lee, Kee Jeung], Kim, KM[Kim, Kyung Min], Choi, BJ[Choi, Byung Joon], Hwang, CS[Hwang, Cheol Seong]
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 201506

157

Self-Limited Switching in Ta2O5/TaOx Memristors Exhibiting Uniform Multilevel Changes in Resistance
Kim, KM[Kim, Kyung Min], Lee, SR[Lee, Seung Ryul], Kim, S[Kim, Sungho], Chang, M[Chang, Man], Hwang, CS[Hwang, Cheol Seong]
ADVANCED FUNCTIONAL MATERIALS, 201503

158

Titanium dioxide thin films for next-generation memory devices
Kim, SK[Kim, Seong Keun], Kim, KM[Kim, Kyung Min], Jeong, DS[Jeong, Doo Seok], Jeon, W[Jeon, Woojin], Yoon, KJ[Yoon, Kyung Jean], Hwang, CS[Hwang, Cheol Seong]
JOURNAL OF MATERIALS RESEARCH, 201302

159

Spectroscopic investigation of the hole states in Ni-deficient NiO films
Cho, DY[Cho, Deok-Yong], Song, SJ[Song, Seul Ji], Kim, UK[Kim, Un Ki], Kim, KM[Kim, Kyung Min], Lee, HK[Lee, Han-Koo], Hwang, CS[Hwang, Cheol Seong]
JOURNAL OF MATERIALS CHEMISTRY C, 2013

160

Modeling for multilevel switching in oxide-based bipolar resistive memory
Hur, JH[Hur, Ji-Hyun], Kim, KM[Kim, Kyung Min], Chang, M[Chang, Man], Lee, SR[Lee, Seung Ryul], Lee, D[Lee, Dongsoo], Lee, CB[Lee, Chang Bum], Lee, MJ[Lee, Myoung-Jae], Kim, YB[Kim, Young-Bae], Kim, CJ[Kim, Chang-Jung], Chung, UI[Chung, U-In]
NANOTECHNOLOGY, 201206