Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors

Thermally evaporated Cu2ZnSnS4 solar cells

Arsenic decapping and half cycle reactions during atomic layer deposition of Al2O3 on In0.53Ga0.47As(001)

Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates

Fabrication and sub-band-gap absorption of single-crystal Si supersaturated with Se by pulsed laser mixing

In0.53Ga0.47As Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

Unpinned Interface Between Al2O3 Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In0.53Ga0.47As(001)

Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In(0.2)Ga(0.8)As and deposition of ultrathin Al(2)O(3) gate insulators

Modeling RHEED intensity oscillations in multilayer epitaxy: Determination of the Ehrlich-Schwoebel barrier in Ge(001) homoepitaxy

Kinetic-energy induced smoothening and delay of epitaxial breakdown in pulsed-laser deposition