An experimental 256 Mb non-volatile DRAM with cell plate boosted programming technique
Ahn, J.-H., Hong, S.-H., Kim, S.-J., Ko, J.-B., Shin, S.-W., Lee, S.-D., Kim, Y.-W., Lee, K.-S., Lee, S.-K., Jang, S.-E., Choi, J.-H., Kim, S.-Y., Bae, G.-H., Park, S.-W., Park, Y.-J.
Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International, 2019.02