Phonon transport in Si nanowires with elastically dissimilar barriers
J. H. Oh, M. G. Jang, M. Shin, S. -H. Lee
Applied Physics Letters, 2012
62
Phonon thermal conductivity in silicon nanowires: the effects of surface roughness at low temperature
J. H. Oh, M. Shin, M. G. Jang
Journal of Applied Physics, 2012
63
Intrinsic reduction of ballistic hole current due to quantum mechanical coupling of heavy and light holes in p-type Si nanowire field effect transistors
Mincheol Shin
Applied Physics Letters, 2011
64
First- and second-order crossover of the escape rate for the biaxial spin model with eld applied along the hard at the resonance
Doo-hyung Kang, Mincheol Shin, Gwang-Hee Kim
Journal of Korean Physical Society, 2011
65
Quantum-classical crossover of the escape rate in the biaxial nanomagnets with a higher order symmetry
Gwang-Hee Kim, Doo-hyung Kang, Mincheol Shin
European Physical Journal B, 2011
66
Quantum Mechanical Simulation of Hole Transport in p-type Si Schottky Barrier MOSFETs
Wonchul Choi, Mincheol Shin
Journal of Nanoscience and Nanotechnology,
67
Interface model for HfO2 gate stack from first principles calculations and its application to nanoscale device simulations
Mincheol Shin, Yongjin Park, Ki-jeong Kong, Hyunju Chang
Applied Physics Letters, 2011
68
Quantum transport of holes in 1D, 2D, and 3D devices: the k ·p method
Mincheol Shin
J. of Computational Electronics, 2011
69
Hole-effective Masses in the Transport Calculation of Si Nanowire pMOSFETs
Anh Tuan Tran Le, Mincheol Shin
Journal of Nanoscience and Nanotechnology, 2011
70
Effect of channel orientation in p-type nanowire Schottky barrier metal-oxide-semiconductor field-effect transistors