발행물

전체 논문

143

131

Optimum Er concentration for in situ doped GaN visible and infrared luminescence
Lee, DS[Lee, Dong-Seon], Heikenfeld J[Heikenfeld J], Steckl AJ[Steckl AJ], Hommerich U[Hommerich U], Seo JT[Seo JT], Braud A[Braud A], Zavada J[Zavada J]
Applied Physics Letters, 200108

132

Multiple color capability from rare earth-doped gallium nitride
Steckl AJ[Steckl AJ], Heikenfeld J[Heikenfeld J], Lee, DS[Lee, Dong-Seon], Garter M[Garter M]
Materials Science & Engineering B: Solid-State Materials for Advanced Technology, 200104

133

Low-voltage GaN:Er green electroluminescent devices
Lee, D. S.[Lee, D. S.], Garter, M.[Garter, M.], Birkhahn, R.[Birkhahn, R.], Steckl, A. J.[Steckl, A. J.], Heikenfeld, J.[Heikenfeld, J
Applied Physics Letters, 200012

134

Voltage-controlled yellow or orange emission from GaN codoped with Er and Eu
Lee, DS[Lee, Dong-Seon], Heikenfeld J[Heikenfeld J], Birkhahn R[Birkhahn R], Garter M[Garter M], Lee BK[Lee BK], Steckl AJ[Steckl AJ]
Applied Physics Letters, 200003

135

Blue emission from Tm-doped GaN electroluminescent devices
Lee, DS[Lee, Dong-Seon], A.J.Steckl[A.J.Steckl], M.Garter[M.Garter], J.Heikenfeld[J.Heikenfeld], R.Birkhahn[R.Birkhahn]
Applied Physics Letters, 199910

136

Red light emission by photoluminescence and electroluminescence from Eu-doped GaN
Heikenfeld J[Heikenfeld, Jas, Garter M[Garter, Michael J.], Lee, DS[Lee, Dong-Seon], Birkhahn R[Birkhahn, Ronald, Steckl AJ[Steckl, Andrew J.]
Applied Physics Letters, 199908

137

Growth and Morphology of Er-doped GaN on Sapphire and HVPE Substrates
Lee, DS[Lee, Dong-Seon], R.H.Birkhahn[R.H.Birkhahn], R.A.Hudgins[R.A.Hudgins], A.J.Steckl[A.J.Steckl], R.J.Molnar[R.J.Molnar], J.M.Saleh[J.M.Saleh], J.M.Zavada[J.M.Zavada]
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 199905

138

Optical and Structural Properties of Er3+ - Doped GaN Growth by MBE
Lee, DS[Lee, Dong-Seon], R.H.Birkhahn[R.H.Birkhahn], R.Hudgins[R.Hudgins], A.J.Steckl[A.J.Steckl], A.Saleh[A.Saleh], R.G.Wilson[R.G.Wilson], J.M.Zavada[J.M.Zavada], Lee, B.K.[Lee, B.K.]
MRS Internet Journal of Nitride Semiconductor Research, 199901

139

Understanding the 2D-material and substrate interaction during epitaxial growth towards successful remote epitaxy: a review
Lee, DS[Lee, Dong-Seon], Ji, J.[Ji, Jongho], Kwak, H.-M.[Kwak, Hoe-Min], Yu, J.[Yu, Jimyeong], Park, S.[Park, Sangwoo], Park, J.-H.[Park, Jeong-Hwan, Kim, H.[Kim, Hyunsoo], Kim, S.[Kim, Seokgi], Kim, S.[Kim, Sungkyu], Kum, H.S.[Kum, Hyun S.]
Nano Convergence, 202312

140

Effect of p-GaN hole concentration on the stabilization and performance of a graphene current spreading layer in near-ultraviolet light-emitting diodes
Min, J.-H.[Min, Junghong], Seo, T.H.[Seo, Tae Hoon], Choi, S.-B.[Choi, Sangbae], Kim, K.[Kim, Kiyoung], Lee, J.-Y.[Lee, Junyeob], Park, M.-D.[Park, Mun Do], Kim, M.J.[Kim, Myung Jong], Suh, E.-K.[Suh, Eunkyung], Kim, J.-R.[Kim, Jongryeol], Lee, DS[Lee, Dong-Seon]
Current Applied Physics, 201610