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143

141

Improved light emission through an AlGaN coalescence layer of 365-nm ultraviolet lighting-emitting diodes on patterned sapphire substrates
Kwak, YS[Kwak, Young-Sun], Lee, JY[Lee, Jun-Youb], Choi, HR[Choi, Hye-Rin], Kim, DH[Kim, Do-Hyung], Lee, DS[Lee, Dong-Seon], Jeon, SR[Jeon, Seong-Ran], Kong, BH[Kong, Bo-Hyun], Cho, HK[Cho, Hyung-Koun]
Journal of the Korean Physical Society, 201303

142

Relationship between phase and generation mechanisms of THz waves in InAs
Jeong, H[Jeong, Hoonill], Shin, SH[Shin, Sanghoon], Kim, SY[Kim, Sang Yoon], Song, JD[Song, Jindong], Choi, SB[Choi, Sangbae], Lee, DS[Lee, Dong-Seon], Lee, J[Lee, Jinho H], Jho, YD[Jho, Young Dahl]
Current Applied Physics, 201205

143

Electroluminescence enhancement of (11(2)over-bar2) semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates
Bae, SY[Bae, Si Young], Lee, DS[Lee, Dong-Seon], Kong, BH[Kong, Bohyun], Cho, HK[Cho, Hyung Koun], Kaeding, JF[Kaeding, John F., Nakamura, S[Nakamura, Shuji], DenBaars, SP[DenBaars, Steph, Speck, JS[Speck, James]
Current Applied Physics, 201105