Abstract Autonomous driving relies on the precise recognition of objects using light detection and ranging (LiDAR) technology, that operates at a specific wavelength of 905 nm. Black objects, such as carbon black used in vehicle coating, tend to absorb this specific wavelength significantly, which limits the performance of LiDAR sensors. To address this issue, researchers have explored creating dark‐toned materials that can be detected by LiDAR with high NIR reflectivity while maintaining a true blackness ( L * < 20 based on the CIE color coordinates). These materials fall into two categories: organic and inorganic pigments. Organic pigments can be synthetically adjusted to achieve true blackness by manipulating their functional groups, but achieving high NIR reflectivity remains challenging, often requiring a bilayer structure with NIR‐reflective white base and an upper layer of organic black pigments. Additionally, the need for hydrophobic additives and resistance to degradation from sunlight further restricts their use. In the case of inorganic pigments, the desired LiDAR‐detectable properties can be obtained through careful control of their composition, structure, and morphology, allowing for single‐layer coatings with appropriate design. This review highlights recent advancements in developing organic and inorganic LiDAR‐detectable black pigments and outlines future material design strategies for autonomous vehicle systems.

Abstract Facile charge transfer between source/drain (S/D) electrodes and organic semiconductor (OSC) channel is crucial for high‐mobility organic field‐effect transistors (OFETs). Herein, a novel OFET geometry is developed by modifying a top‐contact bottom‐gate device structure, termed a buried‐contact OFET, enabling close proximity between the S/D‐OSC interface and conducting channel, consequently decreasing the access contact resistance ( R C,acc ) and overall contact resistance (R C ). Conventional post‐thermal annealing is combined with a burying pressure (pressure‐thermal annealing (PTA)). The synergistic effect of thermal and pressure annealings leads to the softened OSC layer enabling metal electrodes to bury inward by applied pressure. This process induces structural transitions from a top‐contact to buried‐contact configuration, as verified by atomic force microscopy and finite element simulations. Transfer line method and 4‐probe measurements revealed that PTA reduces the contact by 1/3 (65 kΩ cm) and the source‐to‐drain voltage waste due to charge injection from 52% to 31%. Consequently, the field‐effect mobility is four times higher than that of a conventional thermally annealed top‐contact OFET. The density of deep traps ( N tr ) is mainly distributed in the OSC bulk responsible for charge injection. Remarkably, the N tr decreased 30‐fold using PTA, resulting in a shallow sub‐threshold region and a threshold voltage close to zero.