발행물
컨퍼런스
The 11th International Conference on Advanced Materials and Devices (ICAMD)
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Conducting Channel Migration in Multilayer Transistors
2018 한국물리학회
Coulomb drag transistor via two-dimensional heterostructure
ISPSA 2018
Hexagonal-BN (h-BN) as an ideal substrate for MoS2 electronics
2017 MRS Fall meeting
Photoresponsivity Enhancements of GeS by AuCl3 Doping
2017 한국물리학회 가을 정기학술발표
Suppressed Coulomb scattering and Schottky barrier reduction on MoS2/h-Bn heterostructure