Impact Ionization and Hot-Carrier Degradation in Saddle-Fin and Buried-Gate Transistor of Dynamic Random Access Memory at Cryogenic Temperature
Lee, N (Lee, Namhyun), Kim, DH (Kim, Dae Hwan), Kim, Y (Kim, Yoon), Kim, GJ (Kim, Gang-Jun), Park, J (Park, Jun), Kim, C (Kim, Changhyun), Kang, M (Kang, Myounggon), Choi, HS (Choi, Hyun-Seok)
IEEE ELECTRON DEVICE LETTERS, 2021