발행물
컨퍼런스
ENGE
2024
,
Integration of a Gated Thyristor With Split-Gates and Bulk FinFETs on a Silicon Substrate for High-Density Computing Units
IEEE SNW
Investigation of Row Hammer and Passing Gate Effects Based on the Work Functions of Dual Gates in DRAM Cells
Analysis of Row Hammer and Passing Gate Effect in DRAM Cells by BCAT Structural Design
Impact of Proton Irradiation on SiNx and Si–SiO2 Interfaces in FLASH Memory
32회 한국반도체학술대회
2025
3D NAND Compatible Vertical Three Word Lines Gate-Controlled Thyristor (GCT) DRAM