Comparative study on top- and bottom-source vertical-channel tunnel field-effect transistors
Min-Chul Sun, Hyun Woo Kim, Sang Wan Kim, Garam Kim, Hyungjin Kim, Byung-Gook Park
IEICE Transactions on Electronics, 2012
52
Study on threshold voltage control of tunnel field-effect transistors using VT-control doping region
Hyungjin Kim, Min-Chul Sun, Hyun Woo Kim, Sang Wan Kim, Garam Kim, Byung-Gook Park
IEICE Transactions on Electronics, 2012
53
Design of thin-body double-gated vertical-channel tunneling field-effect transistors for ultralow-power logic circuits
Min-Chul Sun, Sang Wan Kim, Hyun Woo Kim, Garam Kim, Hyungjin Kim, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park
Japanese Journal of Applied Physics, 2012
54
Split-Gate-Structure 1T DRAM for Retention Characteristic Improvement
Garam Kim, Sang Wan Kim, Kyung-Chang Ryoo, Jeong-Hoon Oh, Min-Chul Sun, Hyun Woo Kim, Dae Woong Kwon, Jisoo Chang, Sunghun Jung, Byung-Gook Park
Journal of Nanoscience and Nanotechnology, 2011
55
Charge injection from gate electrode by simultaneous stress of optical and electrical biases in HfInZnO amorphous oxide thin film transistor
Dae Woong Kwon, Jang Hyun Kim, Jisoo Chang, Sang Wan Kim, Min-Chul Sun, Garam Kim, Hyun Woo Kim, Jae Chul Park, Ihun Song, Chang Jung Kim, U In Jung, Byung-Gook Park
Applied Physics Letters, 2010
56
Analytical Model of the Vertical Pinned Photodiode
김현우, Jan Genoe, Edward van Sieleghem, 이지원
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022
57
Frequency Doubler Based on Ferroelectric Tunnel Field-Effect Transistor
권대웅, 김장현, 곽빈, 김현우
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022
58
Recessed Channel Ferroelectric-Gate Field-Effect Transistor Memory With Ferroelectric Layer Between Dual Metal Gates
김현우
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022
59
Steep Switching Characteristics of L-Shaped Tunnel FET With Doping Engineering
Kim, HW (Kim, Hyun Woo), Kwon, D (Kwon, Daewoong)
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2021