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51

11

Wake-Up and Endurance Characteristics in Hf0.5Zr0.5O2-Based Metal-Ferroelectric-Metal Capacitor Depending on the Crystal Orientation of the TiN Bottom Electrodes
Han Dong Hee, Lee Ae Jin, Nam Min Kyeong, Lee Seungwoo, Choi Su Jin, Kim Youngjin, Moon Taehwan, Jeon Woojin
IEEE TRANSACTIONS ON ELECTRON DEVICES, 202304

12

Large remnant polarization and great reliability characteristics in W/HZO/W ferroelectric capacitors
Asapu Shiva, Pagaduan James Nicolas, Zhuo Ye, Moon Taehwan, Midya Rivu, Gao Dawei, Lee Jungmin, Wu Qing, Barnell Mark, Ganguli Sabyasachi, Katsumata Reika, Chen Yong, Xia Qiangfei, Yang J. Joshua
FRONTIERS IN MATERIALS, 202208

13

Hybrid Deep Learning Crystallographic Mapping of Polymorphic Phases in Polycrystalline Hf0.5Zr0.5O2 Thin Films
Kim Young-Hoon, Yang Sang-Hyeok, Jeong Myoungho, Jung Min-Hyoung, Yang Daehee, Lee Hyangsook, Moon Taehwan, Heo Jinseong, Jeong Hu Young, Lee Eunha, Kim Young-Min
SMALL, 202205

14

Unexpectedly low barrier of ferroelectric switching in HfO2 via topological domain walls
Choe Duk-Hyun, Kim Sunghyun, Moon Taehwan, Jo Sanghyun, Bae Hagyoul, Nam Seung-Geol, Lee Yun Seong, Heo Jinseong
MATERIALS TODAY, 202111

15

Unveiling the Origin of Robust Ferroelectricity in Sub-2 nm Hafnium Zirconium Oxide Films
Lee Hyangsook, Choe Duk-Hyun, Jo Sanghyun, Kim Jung-Hwa, Lee Hyun Hwi, Shin Hyun-Joon, Park Yeehyun, Kang Seunghun, Cho Yeonchoo, Park Seontae, Moon Taehwan, Eom Deokjoon, Leem Mirine, Kim Yunseok, Heo Jinseong, Lee Eunha, Kim Hyoungsub
ACS APPLIED MATERIALS & INTERFACES, 202108

16

Threshold Voltage Modulation in a Transistor with a Two-Dimensional Electron Gas Channel at the Interface between Al2O3 and Sub-5 nm ZnO Films
Lee Hyun Jae, Moon Taehwan, Kang Sukin, Kim Woohyun, Hwang Cheol Seong
ACS APPLIED ELECTRONIC MATERIALS, 202107

17

Characterization of a 2D Electron Gas at the Interface of Atomic-Layer Deposited Al2O3/ZnO Thin Films for a Field-Effect Transistor
Lee Hyun Jae, Moon Taehwan, Hyun Seung Dam, Kang Sukin, Hwang Cheol Seong
ADVANCED ELECTRONIC MATERIALS, 202101

18

Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al2O3/SrTiO3 Interface
Moon Taehwan, Lee Hyun Jae, Hyun Seung Dam, Kim Baek Su, Kim Ho Hyun, Hwang Cheol Seong
ADVANCED ELECTRONIC MATERIALS, 202006

19

A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors
Kim Baek Su, Hyun Seung Dam, Moon Taehwan, Kim Keum Do, Lee Young Hwan, Park Hyeon Woo, Lee Yong Bin, Roh Jangho, Kim Beom Yong, Kim Ho Hyun, Park Min Hyuk, Hwang Cheol Seong
NANOSCALE RESEARCH LETTERS, 202004

20

A comprehensive study on the mechanism of ferroelectric phase formation in hafnia-zirconia nanolaminates and superlattices
Park Min Hyuk, Kim Han Joon, Lee Gwangyeob, Park Jaehong, Lee Young Hwan, Kim Yu Jin, Moon Taehwan, Kim Keum, Hyun Seung Dam, Park Hyun Woo, Chang Hye Jung, Choi Jung-Hae, Hwang Cheol Seong
APPLIED PHYSICS REVIEWS, 201912