Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer
Kim, Han Joon, Park, Min Hyuk, Kim, Yu Jin, Lee, Young Hwan, Jeon, Woojin, Gwon, Taehong, Moon, Taehwan, Do Kim, Keum, Hwang, Cheol Seong
APPLIED PHYSICS LETTERS, 201411