발행물
컨퍼런스
IEEE seoul section
2023
,
Self-rectifying Resistive Random-Access Memory based on Molybdenum disulfide for Low Power Synapse Array,
Spherical Shallow Trench Isolation with silicon nitride layer in Buried Gate DRAM for reducing pass gate disturbance,
A Palladium-Deposited Molybdenum Disulfide-Based Hydrogen Sensor at Room Temperature,
International Conference on Solid State Devices and Materials (SSDM)
2008
Positive Feedback Field Effect Transistor Based on Vertical NAND Flash Structure for In-Memory Computing,
Conference on Electronics, Semiconductor, and AI
Two-electrode RRAM Device for Memristive Behavior Using Nanostructured Materials Application,