발행물
컨퍼런스
International Conference on Electronics, Information and Communication (ICEIC)
2008
,
ReRAM Switching Performance based on Single-Walled Carbon Nanotubes Wire Electrode,
IEEE seoul section
2022
Charge Trap Flash structure with Feedback Field Effect Transistor for Processing in Memory,
Multi-Gate BCAT Structure and Select Word-Line Driver in DRAM for Reduction of GIDL,
Nano Korea
Memristor based on Al2O3/HfOx for switching layer using Single-Walled Carbon Nanotubes,
Re-configurable logic and memory device using multi-gate Feedback Field Effect Transistor,