,

Annealing Dependent Electrical Characteristics of (AlxGa1-x)2O3/4H-SiC

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Influence of RF magnetron sputtered (Al0.1Ga0.9)2O3/4H-SiC Schottky Barrier Diode annealed in different environments

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Improvement of Self-heating Effect in Heterostructured Ga2O3 MESFETs

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Characteristics of (AlxGa1-x)2O3/4H-SiC Heterojunction Diodes for Different Al/Ga Ratios

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Design of 4.5kV 4H-SiC Superjunction MOSFET for Fast Dynamic performances