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컨퍼런스
제22회 한국반도체학술대회
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Various Heterojunction Single Gate Tunneling FETs with Graded Channel Doping in Sub-40 nm Channels
IEEE International Nanoelectronics Conference
The Variability due to Random Discrete Dopant and Grain Boundaryin 3D NAND Unit Cell
2014 Non-Volatile Memory Technology Symposium
The Temperature Dependence of Threshold Voltage Variations due to Oblique Sing Grain Boundary in 3D NAND unit Cells
2014 IEEE 14th International Conference on Nanotechnology
Noise Consideration for Cancer Marker Detection Using Nanowire Sensors
제21회 한국반도체학술대회
3D Simulation of Threshold Voltage Variations Due to Random Grain Boundary and Discrete Dopants in Sub-20 nm Gate-All-Around Poly-SiTransistor