발행물
컨퍼런스
한국반도체 학술대회
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Analysis of Leakage Mechanism on DRAM Cell with FN and Hot Carrier Stress
International Conference on Solid State Devices and Materials
Highly Reliable 256Mb NOR Flash MLC with Self-Aligned Process and Controlled Edge Profile
Design Technique for Soft-Programming in NOR Type Flash E2PROM Cells
Solid-State and Integrated Circuits Technology
Optimal ramped-gate soft programming of over-erased flash EEPROM cells at given current