발행물
컨퍼런스
2010 IEEE Nanotechnology Materials and Devices Conference
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Comparative study of C-V characteristics in Si-NWFET and MOSFET
2010 International Conference on Solid State Devices and Materials
C-V Characteristics and Analysis of Undoped Gate-All-Around Nanowire FET Array
IEEE Interantional Conference on Nanotechnology
Device Lifetime Estimation under NBTI Stress Considering Interface Trap Generation
IEEE 48th Annual International Reliability Physics Symposium
Characterization of Gate-All-Around Si-NWFET, including Rsd, Cylindrical Coordinate Based 1/f Noiseand Hot Carrier Effects
제17회 한국반도체학술대회
3D Simulation of NBTI in pMOSFET’s Including Discrete Interface and Oxide Traps Generation