발행물
컨퍼런스
International Conference on Solid State Devices and Materials
,
Near Surface Oxide Trap Density Profiling in NO and Remote Plasma Nitrided Oxides in Nano-Scale MOSFETs
Silicon Nanoelectronics Workshop
A New Recessed FINFET with R-shaped side channel (RFinFET) for DRAM CellApplications
한국반도체 학술대회
A Simulation Study of the Depletion Type FINFET with Non-overlapped Source/Drain for DRAM Cell Applications
A New Recess-FINFET Structure (RFinFET) for DRAM Cell Applications
A Reliable Extraction Method of Cycling Induced Interface States by Implementing Realistic P/E Stresses in the Reference cell comparing with the Flash