발행물
컨퍼런스
제18회 한국반도체학술대회
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Universality in the Interface Trap Relaxation of NBTI and FN Stress: Measurement by Subthreshold Slope Method on nMOSFET and Its Modeling
18th Korean Conference on Semiconductors
Inversitigation of GIDL Behavior in Si-Nanowire FET with Hot Carrier Stress
IEEE Workshop on Compact Modeling
Universal Relaxation Model for the FN stress/relaxztion in the nMOSFET device
2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology Proceedings
Characteristics and modeling of Si-nanowire FETs
IEEE Nanotechnology Materials and Devices Conference
Comparative Study of C-V Characterisitcs in Si-NWFET and MOSFET