발행물
컨퍼런스
2009 대한전자공학회 하계종합학술대회
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The simulation of the pMOSFET degradation under NBTI using Si-SiO2 interface trap generation model based on Quantum mechanical simulation
한국반도체 학술대회
3D Statistical Simulation Study of Mobility Fluctuation on MOSFET Induced by a Single Charge in SiO2 layer
Modeling of Negative Bias Temperature Instability: Quantum Mechanical Effect and Particle Simulation
International Conference on Simulation of Semiconductor Processes and Devices
A Unified Approach for the Realiability Modeling of MOSFETs
IEEE Workshop on Compact Modeling
3D simulation study of local mobility fluctuation on MOSFET induced by a single trapped charge in SiO2 layer