발행물
컨퍼런스
17th Korean Conference on Semiconductors
,
DD based modeling of mobility by discrete charges in scaled MOSFETs
제17회 한국반도체학술대회
Accurate Extraction of Volume Trap Density from Si-Nanowire FET using the Newly Developed Cylindrical Coordinate Based 1/f Noise Model
International Conference on Solid State Devices and Material
Series Resistance Behavior Extracted from Silicon Nanowire Transistors using the Y-function Technique
14th International Conference on Simulation of Semiconductor Processes and Devices
Simulation on NBTI Degradation Due to Discrete Interface Traps Considering Local Mobility Model and Its Statistical Effects
2009 대한전자공학회 하계종합학술대회
Mobility Fluctuation on MOSFET Induced by Discrete Charges in the SiO2