발행물

전체 논문

129

101

Simulation Study of Enhancement Mode Multi-Gate Vertical Gallium Oxide MOSFETs
Park, J[Park, Junsung], Hong, SM[Hong, Sung-Min]
ECS Journal of Solid State Science and Technology, 201903

102

Improved Ohmic Contact by Pre-Metallization Annealing Process in Quaternary In0.04Al0.65Ga0.31N/GaN HEMTs
Mun, HJ [Mun, Ha Jin], Hwang, JH [Hwang, Ji Hyun], Kwon, YK [Kwon, Young-Ki], Hong, SM [Hong, Sung-Min], Jang, J.-H.[Jang, Jae-Hyung]
Physica Status Solidi (A) Applications and Materials, 201804

103

Transient Simulation of Semiconductor Devices Using a Deterministic Boltzmann Equation Solver
Hong, SM[Hong, Sung-Min], Jang, JH[Jang, Jae Hyung]
IEEE Journal of the Electron Devices Society, 201801

104

Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid
Oh, SI[Oh, Se-I], Rani, JR[Rani, Janardhanan R, Hong, SM[Hong, Sung-Min], Jang, JH[Jang, Jae-Hyung]
Nanoscale, 201710

105

Substrate Partitioning Scheme for Compact Charge Modeling of Multigate MOSFETs
Hong, SM[Hong, Sung-Min], Park, J[Park, Junsung]
IEEE Journal of the Electron Devices Society, 201705

106

Balanced MSM-2DEG Varactors Based on AlGaN/GaN Heterostructure With Cutoff Frequency of 1.54 THz
Hwang, JH[Hwang, Ji Hyun], Lee, KJ[Lee, Kye-Jeong], Hong, SM[Hong, Sung-Min], Jang, JH[Jang, Jae Hyung]
IEEE Electron Device Letters, 201701

107

A review of recent advances in the spherical harmonics expansion method for semiconductor device simulation
Rupp, K[Rupp, K.], Jungemann, C[Jungemann, C.], Hong, SM[Hong, Sung-Min], Bina, M[Bina, M.], Grasser, T[Grasser, T.], Jungel, A[Juengel, A.]
Journal of Computational Electronics, 201609

108

GaN HEMTs with quaternary In0.05Al0.75Ga0.2N Schottky barrier layer
Hwang, J.H.[Hwang, J.H.], Kim, S.-M.[Kim, S.-M.], Woo, J.M.[Woo, J.M.], Hong, S.-M.[Hong, Sung-Min], Jang, J.-H.[Jang, Jae-Hyung]
Physica Status Solidi (A) Applications and Materials, 201602

109

Numerical Simulation of Plasma Oscillation in 2-D Electron Gas Using a Periodic Steady-State Solver
Hong, SM[Hong, Sung-Min], Jang, JH[Jang, Jae-Hyung]
IEEE Transactions on Electron Devices, 201512

110

Metal-Semiconductor-Metal Varactors Based on InAlN/GaN Heterostructure With Cutoff Frequency of 308 GHz
Geum, DM[Geum, Dae-Myeong], Shin, SH[Shin, Seung Heon], Hong, SM[Hong, Sung-Min], Jang, JH[Jang, Jae-Hyung]
IEEE ELECTRON DEVICE LETTERS, 201504