발행물

전체 논문

129

121

A proposal on an optimized device structure with experimental studies on recent devices for the DRAM cell transistor
Lee, MJ[Lee, Myoung Jin], Hong, SJ[Hong, SJ], Park, SW[Park, SW], Chung, IY[Chung, IY], Park, YJ[Park, YJ], Min, HS[Min, HS], Jin, S[Jin, S], Baek, CK[Baek, CK], Hong, SM[Hong, Sung-Min], Park, SY[Park, SY], Park, HH[Park, HH], Lee, SD[Lee, SD], Chung, SW[Chung, SW], Jeong, JG[Jeong, JG]
IEEE Transactions on Electron Devices, 200712

122

Governing equations of the terminal current Green`s functions and their application to derivation of the Nyquist theorem for multiterminal semiconductor devices
Hong, SM[Hong, Sung-Min], Min, HS[Min, HS], Park, YJ[Park, YJ], Park, CH[Park, CH]
Journal of Applied Physics, 200710

123

Physics-based analysis and simulation of phase noise in oscillators
Hong, SM[Hong, Sung-Min], Park, CH[Park, Chan Hyeong], Min, HS[Min, Hong Shick], Park, YJ[Park, Young June]
IEEE Transactions on Electron Devices, 200608

124

Analytical formula of the excess noise in homogeneous semiconductors
Chan Hyeong Park, Sung-Min Hong, Hong Shick Min, Young June Park
Journal of The Institute of Electronics Engineers of Korea, 2008

125

Harmonic balance analysis of MOSFET by using a new comprehensive quasi-2D model
Raseong Kim, Sung-Min Hong, Young-June Park, Hong Shick Min
Journal of the Korean Physical Society, 2005

126

First Principles Approach to Analyze Defect-induced Multiphonon Transition at the Si-SiO2 Interface
Park, J[Park, Junsung], Hong, SM[Hong, Sung-Min]
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 201904

127

Transient Simulation of Graphene Sheets using a Deterministic Boltzmann Equation Solver
Hong, SM[Hong, Sung-Min]
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 201704

128

균질 반도체의 과잉 잡음에 관한 해석적 식
박찬형[박찬형], 홍성민[홍성민], 민홍식[민홍식], 박영준[박영준]
전자공학회논문지 - SD, 200809

129

Harmonic balance analysis of MOSFET by using a new comprehensive quasi-2D model
Kim, R[Kim, R], Hong, SM[Hong, Sung-Min], Park, YJ[Park, YJ], Min, HS[Min, HS], Park, CH[Park, CH]
Journal of the Korean Physical Society, 200511