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Method for delta-doping in GaAs epitaxial layer grown on silicon substrate by metalorganic chemical vapor deposition
US Patent No. 5, 281, 551
Heater for chemical vapor deposition equipment
US Patent No. 5, 648, 006
Quantum wire fabrication method using GaAs/AlGaAs substrate
Korean Patent No. 100-130610
Growth control method of side wall epitaxial layer of semiconductor mesa and V-grooved structures
Japanese Patent No. 2756949
Epitaxial growth rate varying method for side surface of semiconductor pattern
US. Patent No. 5,888,294
Fabrication method of optical and electrical blocking structure of optoelectronic devices using lattice mismatch
Korean Patent No. 100-239677
Fabrication method of half dome structure for highly efficient opto-electronic devices
Korean Patent No. 100-219835
Fabrication method of current blocking structure for optoelectronic devices using oxidized aluminum gallium arsenide
Korean Patent No. 100-234005
Fabrication method of high density quantum dot array by selective growth
Korean Patent No. 100-219837
Fabrication method of current blocking structure for optoelectronic devices
Korean Patent No. 100-242789
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