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전체 논문

233

201

InAS(y)P(1-y) metamorphic buffer layers on InP substrates for mid-IR diode lasers
Kirch, J (Kirch, Jeremy), Garrod, T (Garrod, Toby), Kim, S (Kim, Sangho), Park, JH (Park, Joo H.), Shin, JC (Shin, Jae C.), Mawst, LJ (Mawst, L. J.), Kuech, TF (Kuech, T. F.), Song, X (Song, X.), Babcock, SE (Babcock, S. E.), Vurgaftman, I (Vurgaftman, Igo, Meyer, JR (Meyer, Jerry R.), Kuan, TS (Kuan, Tung-Sheng)
JOURNAL OF CRYSTAL GROWTH, 201004

202

Characteristics of mid-IR-emitting deep-well quantum cascade lasers grown by MOCVD
Shin, JC (Shin, J. C.), D'Souza, M (D'Souza, M.), Kirch, J (Kirch, J.), Park, JH (Park, J. H.), Mawst, LJ (Mawst, L. J.), Botez, D (Botez, D.)
JOURNAL OF CRYSTAL GROWTH, 201004

203

Passivation of Interfacial States for GaAs- and InGaAs/InP-Based Regrown Nanostructures
Rathi, MK (Rathi, M. K.), Tsvid, G (Tsvid, G.), Khandekar, AA (Khandekar, A. A, Shin, JC (Shin, J. C.), Botez, D (Botez, D.), Kuech, TF (Kuech, T. F.)
JOURNAL OF ELECTRONIC MATERIALS, 200910

204

Ultra-low temperature sensitive deep-well quantum cascade lasers (lambda=4.8 mu m) via uptapering conduction band edge of injector regions
Shin, JC (Shin, J. C.), Mawst, LJ (Mawst, L. J.), Botez, D (Botez, D.), Vurgaftman, I (Vurgaftman, I.), Meyer, JR (Meyer, J. R.)
ELECTRONICS LETTERS, 200907

205

Highly temperature insensitive, deep-well 4.8 mu m emitting quantum cascade semiconductor lasers
Shin, JC (Shin, J. C.), D'Souza, M (D'Souza, M.), Liu, Z (Liu, Z.), Kirch, J (Kirch, J.), Mawst, LJ (Mawst, L. J.), Botez, D (Botez, D.), Vurgaftman, I (Vurgaftman, I.), Meyer, JR (Meyer, J. R.)
APPLIED PHYSICS LETTERS, 200905

206

Progress towards intersubband quantum-box lasers for highly efficient continuous wave operation in the mid-infrared
Botez, D (Botez, Dan), Tsvid, G (Tsvid, Gene), D'Souza, M (D'Souza, Mithun), Rathi, M (Rathi, Manish), Shin, JC (Shin, Jae C.), Kirch, J (Kirch, Jeremy), Mawst, LJ (Mawst, Luke J.), Kuech, T (Kuech, Thomas), Vurgaftman, I (Vurgaftman, Igo, Meyer, J (Meyer, Jerry), Plant, J (Plant, Jason), Turner, G (Turner, George)
JOURNAL OF NANOPHOTONICS, 2009

207

InGaAs/GaAsP/AlGaAs, deep-well, quantum-cascade light-emitting structures grown by metalorganic chemical vapor deposition
Xu, DP (Xu, D. P.), D'Souza, M (D'Souza, M.), Shin, JC (Shin, J. C.), Mawst, LJ (Mawst, L. J.), Botez, D (Botez, D.)
JOURNAL OF CRYSTAL GROWTH, 200804

208

Influence of arsenic during indium deposition of the formation of the wetting layers of InAs quantum dots grown by migration enhanced epitaxy
신재철
JOURNAL OF APPLIED PHYSICS - 직접입력, 200410

209

Carrier dynamics in an InGaAs dots-in-a-well sturcutre formed by atomic-labyer epitaxy
신재철
PHYSICAL REVIEW B - 직접입력, 200407

210

Investigation of Detection Wavelength in Quantum Dot Infrared Photodetector
신재철
Journal of the Korean Physical Society, 200407