RnDCircle Logo
김효정 연구실
세종대학교 반도체시스템공학과
김효정 교수
기본 정보
연구 분야
프로젝트
발행물
구성원

김효정 연구실

세종대학교 반도체시스템공학과 김효정 교수

김효정 연구실은 반도체시스템공학과를 기반으로 할라이드 페로브스카이트 기반 저항변화 메모리, 멤리스터 및 crossbar array와 같은 차세대 비휘발성 메모리 소자와 MXene·금속산화물 나노소재를 이용한 가스센서 및 전자후각 시스템을 연구하며, 소재 합성, 나노구조 설계, 계면 제어, 신뢰성 향상을 통해 고성능 반도체 소자와 지능형 센싱 플랫폼의 실용화를 추구하고 있다.

대표 연구 분야
연구 영역 전체보기
할라이드 페로브스카이트 기반 저항변화 메모리 thumbnail
할라이드 페로브스카이트 기반 저항변화 메모리
주요 논문
5
논문 전체보기
1
article
|
gold
·
인용수 1
·
2025
Scalable Photoactive NO <sub>2</sub> ‐Sensing Framework for Plant Health Monitoring
Yun‐Haeng Cho, Kootak Hong, Jung Hwan Seo, Jae Han Chung, Jinho Lee, Sang‐Hyeon Nam, Sunwoo Lee, Jeong‐O Lee, Changui Ahn, Hyojung Kim, Jae Hyun Han, Gyu‐Li Kim, S. T. Ro, Jun Yeon Hwang, Hyeongyu Gim, Zion Park, Chil‐Hyoung Lee, Dongsu Kim, Kwangjae Lee, Young‐Seok Shim, Jun Min Suh, Donghwi Cho
IF 14.1
Advanced Science
Conventional sensing platforms for plant health monitoring are often limited by high operating temperatures, rigid substrates, and poor compatibility with ambient, power-constrained, or biologically sensitive environments. These limitations hinder their integration into emerging platforms such as smart agriculture and plant-interfaced electronics, where mechanical flexibility, energy efficiency, and low thermal budgets are essential. This paper reports a scalable, thermally passive NO<sub>2</sub> sensor based on light-activated 3D TiO<sub>2</sub> nanoarchitectures. Fabricated via sequential glancing angle deposition, the highly ordered porous nanoarchitectures exhibit tunable broadband light scattering and defect-mediated sub-bandgap activation under ambient light. Integrated with a wireless microcontroller and mobile application, the sensor enables autonomous NO<sub>2</sub> monitoring in real-world conditions. Field deployment on Mentha suaveolens plants demonstrates real-time tracking of gas-induced physiological stress, establishing practical ecological relevance. This platform overcomes the key limitations of conventional sensors, offering a structurally tunable, spectrally adaptive, and fabrication-scalable solution for light-powered, bio-integrated environmental monitoring.
https://doi.org/10.1002/advs.202518368
Software deployment
Scalability
Wireless sensor network
Microcontroller
Wireless
Energy harvesting
Broadband
Precision agriculture
Compatibility (geochemistry)
2
review
|
인용수 3
·
2025
Lead-free halide perovskite memristors for scalable crossbar arrays
Do Yeon Heo, Hyojung Kim
IF 11
Nano Convergence
Lead-free halide-perovskite memristors have advanced rapidly from initial proof-of-concept junctions to centimeter-scale selector-free crossbar arrays, maintaining full compatibility with CMOS backend processes. In these highly interconnected matrices, surface passivation, strain-relief interfaces, and non-toxic B-site substitutions successfully reduce sneak currents and stabilize resistance states. The Introduction section lays out the structural and functional basis, detailing phase behavior, bandgap tunability, and tolerance-factor-guided crystal design within Ruddlesden-Popper, Dion-Jacobson, vacancy-ordered, and double-perovskite frameworks, each of which is evaluated for its ability to confine filaments and reduce crosstalk in crossbar configurations. The following sections examine the characteristics of charge transport and the dynamics of ion migration, followed by a detailed outline of chemical and mechanical stabilization strategies in response to the high current densities and heat fluxes typical of large-area crossbars. The comparison of solution, vapor, and solid-state synthesis routes focuses on aspects such as film uniformity, grain-boundary control, and compatibility with flexible or heterogeneous substrates, all evaluated against the demanding uniformity requirements of multilevel crossbar programming. The principles of resistive switching and array architecture are elaborated upon, emphasizing the three-dimensional (3D) stacking of selector-integrated vertical nanowires and hybrid photonic-memristive layers as promising approaches to enhance bandwidth and reduce energy consumption per operation. By integrating sustainable chemistry with scalable crossbar engineering, these memories are set to provide ultra-dense, energy-efficient hardware that meets the performance demands of contemporary artificial intelligence accelerators while adhering to new regulations on hazardous materials in electronic devices.
https://doi.org/10.1186/s40580-025-00507-z
Crossbar switch
Scalability
Materials science
Memristor
Stacking
Nanotechnology
Optoelectronics
Computer science
Resistive random-access memory
Voltage
3
article
|
gold
·
인용수 43
·
2025
Recent advances in MXene gas sensors: synthesis, composites, and mechanisms
Zhicheng Cai, Hyojung Kim
IF 8.8
npj 2D Materials and Applications
Abstract MXenes, a class of two-dimensional (2D) transition metal carbides and nitrides, have emerged as promising materials for high-performance gas sensors due to their unique combination of high electrical conductivity, tunable surface chemistry, and large specific surface area. This review highlights recent advances in MXene-based gas sensing materials, covering their synthesis strategies, structure–property relationships, and applications in both pristine and composite forms. We discuss conventional hydrofluoric acid etching and recent fluorine-free methods for MXene synthesis, and examine how these approaches affect surface terminations, interlayer spacing, and defect profiles relevant to gas sensing. The gas-sensing performance of pristine MXenes and their composites with metal oxides, transition metal dichalcogenides (TMDs), rGO, and conductive polymers is systematically analyzed, along with the underlying sensing mechanisms. Finally, current challenges and future perspectives for MXene-based gas sensors are addressed, with emphasis on enhancing sensitivity, selectivity, and ambient stability for next-generation sensing platforms.
https://doi.org/10.1038/s41699-025-00586-w
Composite material
Materials science
정부 과제
1
과제 전체보기
1
주관|
2021년 8월-2025년 1월
|45,000,000
엔듀런스와 리텐션 향상을 위한 quasi-2D 할라이드 페로브스카이트 기반의 저항변화 메모리 소자
본 과제는 저항변화 메모리 소자의 전기적 특성을 향상시키기 위해 quasi-2D 할라이드 페로브스카이트에 나노구조체를 도입하고, 멕신 퀀텀닷 코팅을 더해 고성능 비휘발성 메모리 구현을 목표로 함. 연구 목표는 (1) Quasi-2D 할라이드 페로브스카이트 스위칭 물질로 1010이상의 ON/OFF 저항비 확보, (2) 멕신을 퀀텀닷 나노 구조로 적용해 105이상의 엔듀런스 사이클 신뢰성 향상임. 이를 위해 PEA 기반 합성에서 dielectric constant 3.3로 쇼트키 배리어 및 ON/OFF 저항비 개선을 유도하고, 최적 유기 양이온 후보군을 선정함. 또한 멕신 퀀텀닷의 electric field concentration, thermal conductivity(1.57 W/m·K), Ag 이온 모빌리티 감소로 SET/RESET 균일화와 필라멘트 안정화를 기대함.
Quasi-2D 할라이드 페로브스카이트
저항변화 메모리 소자
멕신
엔듀런스
리텐션
최신 특허
특허 전체보기
상태출원연도과제명출원번호상세정보
거절2018비휘발성 플렉서블 저항변화 메모리 소자 및 그 제조방법1020180161371
등록2018할라이드 페로브스카이트 물질을 포함하는 비휘발성 저항변화 메모리 소자 및 그 제조방법1020180161370
전체 특허

비휘발성 플렉서블 저항변화 메모리 소자 및 그 제조방법

상태
거절
출원연도
2018
출원번호
1020180161371

할라이드 페로브스카이트 물질을 포함하는 비휘발성 저항변화 메모리 소자 및 그 제조방법

상태
등록
출원연도
2018
출원번호
1020180161370