발행물
컨퍼런스
WLED-5
2014
,
NOISE CHARACTERISTICS IN INGAN-BASED LIGHT-EMITTING DIODES BY EXTERNAL EXCITATION
WLED 5
Extracting Carrier Injection Efficiency of InGaN Light-Emitting Diode
Comparison of Reverse-Current Conduction Mechanisms in Organic and GaN-based Light-Emitting Diodes
Accurate Measurement of Piezoelectric Fields and Their Correlation with Efficiency Droop in GaN Light-Emitting Diodes
Wafer-level characterization of the efficiency droop in InGaN-based blue epitaxial wafer by the resonant photoluminescence