발행물
컨퍼런스
International Workshop on Nitride Semiconductors 2012
2012
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The Enhancement of Green LED Power through the Temperature Optimization of InGaN Well Growth
Comprehensive Understanding of Efficiency Droop by the Saturated Radiative Recombination Rate in InGaN-based Light-Emitting Diodes
Investigation of the Efficiency Droop Mechanism in InGaN Blue LEDs by Using the Temperature-Dependent Photovoltaic Characteristics
제6회 LED.반도체조명학회 학술대회
InGaN/GaN 다중양자우물 청색 발광다이오드의 온도변화에 따른 전기발광을 통한 내부양자효율 측정법의 한계
양자우물 모양과 내부양자효율의 상관관계