발행물
컨퍼런스
12th International Conference on Nitride Semiconductors (ICNS12)
2017
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Modified Shockley diode equation suitable for InGaN-based light-emitting diodes
The 5th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA'17), LED1-2
Quantitative Evaluation of Internal Quantum Efficiency in InGaN Light-Emitting Diodes at Room Temperature
Photonics West 2017
Origin of the high series resistance in InGaN-based blue light-emitting diodes
Characteristics of radiative recombination current in semiconductor quantum-well light-emitting diodes in association with the ideality factor
The 3rd Korea-China Workshop on Nanomaetials and Their Applications to Optoelectornics
2016
Comprehensive Physical Model of InGaN-based Visible Light-Emitting Diodes