발행물
컨퍼런스
2016 Photnics West
2016
,
Interrelations between the forward voltage and the internal quantum efficiency of InGaN-based light-emiting diodes
The 3rd International Conference on Advanced Electromaterials
2015
Stress relaxation on GaN epitaxial layer by using SiO2 thin film on the backside of sapphire substrate
Quantum-Confined Stark Effect in InGaN/GaN Multiple Quantum Wells in Blue Light-Emitting Diodes Investigated by Photocurrent Spectroscopy
The 6th International Symosium on Growth of III-Nitrides
Method of electroluminescence metrology at the LED epi-wafer stage
20th Microoptics Conference (MOC’15)
Techniques for optoelectronic performance evaluation in InGaN-based light-emitting diodes (LEDs)