발행물
컨퍼런스
9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures, Tokyo, Japan
2007
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HVPE GaN grown on vicinal sapphire (0001) substrates with CrN buffer layer
212th Meeting of the Electrochemical Society, Washington DC
Structural Characterization of the Rotation Domain of Aluminum Nitride During Sapphire Nitridation
The Grain Growth Behavior and The Voiding Tendency in Copper Electrodeposits
The 54th Japanese Applied Physics Symposium, Japan, Tokyo
Free-standing GaN substrate by interfacial void
2006 IEEE International Interconnect Technology Conference (IITC), Burlingame, CA
2006
3D Crystalline Structures of Stress Induced Voiding in Cu Interconnects by Focused Ion Beam and Electron Backscattered Diffraction