발행물
컨퍼런스
NANO KOREA 2019
2019
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Statistical inference and forecast of device performance using the process parameters for line edge roughness
Simulation study for gate-all-around nanowire negative capacitance FET with HfO2-based ferroelectric gate stack
Analysis for work function variation in cylindrical gate-all-around (GAA) n-type vertical nanowire tunnel field effect transistor (TFET)
International Conference on Electronics, Information and Communication 2020
2020
Inverter with positive feedback field effect transistor
Nano Convergence Conference 2020
Experimental analysis of MOS capacitor with Al-doped HfO2 insulation layer