Observation of Highly Reproducible Resistive-Switching Behavior from Solution-Based ZnO Nanorods

Bias temperature instability analysis on memory properties improved by hydrogen annealing treatment in Ti/HfOx /Pt capacitors

Resistive switching characteristics of sol-gel based ZnO nanorods fabricated on flexible substrates

Improved reliability of Ti/ZrN/Pt resistive switching memory cells using hydrogen postannealing

A Four-Bit-Per-Cell Program Method with Substrate-Bias Assisted Hot Electron Injection for Charge Trap Flash Memory Devices

Analysis of electrical properties and deep level defects in undoped GaN Schottky barrier diode

Improved performance of GaN-based vertical light emitting diodes with conducting and transparent single-walled carbon nanotube networks

Improved Thermal Stability and Reduced Contact Resistance of Ohmic Contacts on N-Face n-Type GaN With Laser-Assisted Doping

Bipolar Resistive-Switching Phenomena and Resistive-Switching Mechanisms Observed in Zirconium Nitride-Based Resistive-Switching Memory Cells

A CMOS-Process-Compatible ZnO-Based Charge-Trap Flash Memory