Study of Hole Traps in the Oxide-Nitride-Oxide Structure of the SONOS Flash Memory
Seo, YJ, Kim, KC, Kim, HD, 김태근, An, HM
J. Korean Phys. Soc., 2008
332
Reduction of Buffer Leakage in AlGaN/GaN HEMTs with an AlGaN Current-Blocking Barrier by using a Two-Dimensional Simulation
Kim, Su Jin, Kim, Dong Ho, Kim, Jae Moo, 김태근, Choi, Hong Goo, Hahn, Cheol-Koo
J KOREAN PHYS SOC, 2008
333
Effects of the AlSb Buffer Layer and the InAs Channel Thickness on the Electrical Properties of InAs/AlSb-Based 2-DEG HEMT Structures
Shin, S. H., Lim, J. Y., Song, J. D., Kim, H. J., Han, S. H., 김태근
J KOREAN PHYS SOC, 2008
334
Optimization of InGaN/GaN multiple quantum well layers by a two-step varied-barrier-growth temperature method
Leem, Shi Jong, Shin, Young Chul, Kim, Eun Hong, Kim, Chul Min, Lee, Byoung Gyu, Moon, Youngboo, Lee, In Hwan, 김태근
SEMICOND SCI TECHNOL, 2008
335
Optical and electrical properties of indium tin oxide thin films with tilted and spiral microstructures prepared by oblique angle deposition
Zhong, Y., 김태근, Shin, Y. C., Kim, C. M., Lee, B. G., Kim, E. H., Park, Y. J., Sobahan, K. M. A., Hwangbo, C. K., Lee, Y. P.
J MATER RES, 2008
336
Correlation between charge trap distribution and memory characteristics in metal/oxide/nitride/oxide/silicon devices with two different blocking oxides, Al2O3 and SiO2
Seo, Y. J., Kim, K. C., Kim, H. D., Joo, M. S., An, H. M., 김태근
APPL PHYS LETT, 2008
337
Enhanced ripening behavior of Mg-doped CdSe quantum dots
성윤모, 곽우철, 김웅, 김태근
JOURNAL OF MATERIALS RESEARCH, 2008
338
Surface plasmon resonance (SPR) electron and energy transfer in noble metal-zinc oxide composite nanocrystals
이명기, 김태근, 김웅, 성윤모
J PHYS CHEM C, 2008
339
Influence of post-annealing on the electrical properties of metal/oxide/silicon nitride/oxide/silicon capacitors for flash memories
Kim, Hee Dong, An, Ho-Myoung, Kim, Kyoung Chan, Seo, Yu Jeong, 김태근
SEMICOND SCI TECHNOL, 2008
340
Polarized thermal radiation by layer-by-layer metallic emitters with sub-wavelength grating