Electrical characteristics of the resonant-cavity separate absorption, charge, and multiplication avalanche photodetector improved by device optimization
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JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2007
362
Optimization of 660 nm band AlGaInP laser diodes by deep level transient spectroscopy analyses
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Journal of the Korean Physical Society, 2007
363
Optimization of 660-nm-band AlGaInP laser diodes by using deep-level transient spectroscopy analyses
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JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2007
364
Lateral photoconductivity and bound states of self-assembled Ge/Si quantum dots
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NANOTECHNOL, 2007
365
Ripening kinetics of CdSe/ZnSe core/shell nanocrystals
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J PHYS CHEM C, 2007
366
Defect engineering for high-power 780 nm AlGaAs laser diodes
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JOURNAL OF MATERIALS SCIENCE, 2006
367
선택적 분자선 에피택시 방법에 의한 1D-2DEG 혼성 나노선 FET의 구현
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한국전기전자재료학회논문지, 2006
368
Impedance spectroscopy study and electrical behavior of PMN-PZT actuators joined by ceramic slurry
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JOURNAL OF ELECTROCERAMICS, 2006
369
Characteristics of hydrogen storage alloy p-GaN ohmic contacts to for InGaN LEDs
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J. Kor. Phys. Soc, 2006
370
Characteristics of hydrogen storage alloy p-GaN ohmic contacts for InGaN LEDs