Fabrication of Silicon Field Emitters by Forming Porous Silicon

Fabrication of the Silicon Field Emitter Arrays with H2O Densified Oxide as a Gate Insulator

Ultra Shallow p+n Junction Formation Using the Boron Diffusion from Epi-Co Silicide

Fabrication and analysis of a silicon tip avalanche cathode

Novel Fabrication Process of a Si Field Emitter Array with Thermal Oxide as a gate Insulator

Fabrication of deep Submicron PMOSFET with the Source/drain Formed by the Method of As-Preamorphization through the Predeposited Amorphous Si Layer

As Preamorphization of the Predeposited Amorphous si Layer for the Formation of the Silicided Ultra Shallow p+-n Junction

Properties of the p+ Poly-Si Gate Fabricated Using the As Preamorphization

Electrical and Boron Diffusion Characteristics in the As Preamorphized p+ Polysilicon Gate

Formation of the Shallow p+-n Junction by As-Preamorphization Method and Its Characterization