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255

171

Annealing effects of aluminum silicate films grown on Si(100)
Cho, MH[Cho, MH], Rho, YS[Rho, YS], Choi, HJ[Choi, HJ], Nam, SW[Nam, SW], Ko, KH[Ko, KH], Ku, JH[Ku, JH], Kang, HC[KANG, HYUN CHUL], Noh, DY[NOH, DO YOUNG], Whang, CN[Whang, CN], Jeong, K[Jeong, K]
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 200205

172

Long-range order and short-range order study on CoCrPt/Ti films by synchrotron x-ray scattering and extended x-ray absorption fine structure spectroscopy
Sun, CJ[Sun, CJ], Chow, GM[Chow, GM], Wang, JP[Wang, JP], Soo, EW[Soo, EW], Hwu, YK[Hwu, YK], Je, JH[Je, JH], Cho, TS[Cho, TS], Lee, HH[Lee, HH], Noh, DY[NOH, DO YOUNG]
JOURNAL OF APPLIED PHYSICS, 200205

173

Microstructures of GaN islands on a stepped sapphire surface
Kim, CC[Kim, CC], Je, JH[Je, JH], Ruterana, P[Ruterana, P], Degave, F[Degave, F], Nouet, G[Nouet, G], Yi, MS[Yi, MS], Noh, DY[NOH, DO YOUNG], Hwu, Y[Hwu, Y]
JOURNAL OF APPLIED PHYSICS, 200204

174

Structural study of CoCrPt films by anomalous x-ray scattering and extended x-ray absorption fine structure
Chow, GM[Chow, GM], Sun, CJ[Sun, CJ], Soo, EW[Soo, EW], Wang, JP[Wang, JP], Lee, HH[Lee, HH], Noh, DY[NOH, DO YOUNG], Cho, TS[Cho, TS], Je, JH[Je, JH], Hwu, YK[Hwu, YK]
APPLIED PHYSICS LETTERS, 200203

175

Periodic oxide breakdown during oxidation of AlN/Sapphire(0001) films
Kang, HC[KANG, HYUN CHUL], Seo, SH[Seo, SH], Kim, JW[Kim, JW], Noh, DY[NOH, DO YOUNG]
APPLIED PHYSICS LETTERS, 200202

176

Layer thickness dependence of strain in GaN grown by HVPE
Sim, G.G.[Sim, G.G.], Yu, P.W.[YU, PHIL WON], Reynolds, D.C.[Reynolds, D.C, Look, D.C.[Look, D.C.], Kim, S.S.[Kim, S.S.], Noh, D.Y.[NOH, DO YOUNG]
Materials Research Society Symposium - Proceedings, 2002

177

Au catalyzed structural and electrical evolution of Ni/Au contact to GaN
Kim, CC[Kim, CC], Kim, JK[Kim, JK], Lee, JL[Lee, JL], Je, JH[Je, JH], Yi, MS[Yi, MS], Noh, DY[NOH, DO YOUNG], Hwu, Y[Hwu, Y], Ruterana, P[Ruterana, P]
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 200111

178

Effect of step-graded AlxGa1-xN interlayer on properties of GaN grown on Si(111) by ultrahigh vacuum chemical vapor deposition
Park, SJ[Park, Seong-Ju], Noh, DY[Noh, Do Young], Kang, HC[Kang, Hyun Chul], Kim, MH[Min-Ho Kim], Do, YG[Young-Gu Do]
APPLIED PHYSICS LETTERS, 200110

179

In-plane tensile-strained interfacial structure in a GaN nucleation layer on sapphire(0001)
Kim, CC[Kim, CC], Je, JH[Je, JH], Yi, MS[Yi, MS], Noh, DY[NOH, DO YOUNG], Ruterana, P[Ruterana, P]
JOURNAL OF APPLIED PHYSICS, 200109

180

Structural effects of Ti underlayer on CoCrPt magnetic films
Sun, CJ[Sun, CJ], Chow, GM[Chow, GM], Soo, EW[Soo, EW], Wang, JR[Wang, JR], Hwu, YK[Hwu, YK], Cho, TS[Cho, TS], Je, JH[Je, JH], Lee, HH[Lee, HH], Kim, JW[Kim, JW], Noh, DY[NOH, DO YOUNG]
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 200109