발행물
컨퍼런스
The 22th Korean Conference on Semiconductors (KCS 2015)
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Various Heterojunction Single Gate Tunneling FETs with Graded Channel Doping in Sub- 40 nm Channels
The Statistical Distribution of Electrical Characteristics with Random Grain Boundary in Vertical NAND Unit Cells
Electrical Characteristics of Graphene Field Effect Transistors on Stainless Steel (STS) Substrate
한국반도체학술대회(KCS)
2014.02
3D Simulation of Threshold Voltage Variations Due to Random Grain Boundary and Discrete Dopants in Sub-20 nm Gate-All-Around Poly-Si Transistors
An experimental verification of a scaled RC-dominant interconnect line model for High-speed wireline